EPITAXIALLY GROWN COMPOUND SEMICONDUCTOR CRYSTALS WITH BUFFER LAYERS,申请号EP19920303909-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	EPITAXIALLY GROWN COMPOUND SEMICONDUCTOR CRYSTALS WITH BUFFER LAYERS
摘要
申请公布号	EP0511864(A3)	申请公布日期	1993.09.08
申请号	EP19920303909	申请日期	1992.04.30
申请人	SUMITOMO CHEMICAL COMPANY, LIMITED	发明人	HATA, MASAHIKO;FUKUHARA, NOBORU;MAEDA, TAKAYOSHI
分类号	H01L21/20;H01L21/205;H01L21/338;H01L29/205;H01L29/778;H01L29/812;(IPC1-7):H01L21/20;H01L29/10	主分类号	H01L21/20
代理机构		代理人
主权项
地址

您可能感兴趣的专利

CIRCULAR TRIMMING SHEARS

METHOD FOR MAKING DECORATED BATTERY CASINGS

SEALING PIPE JOINTS

CONTAINER & BASE

IC소켓 자동 조립 방법과 그 장치

IMPROVED SYSTEM FOR CORING AN IMAGE-REPRESENTING SIGNAL.

SEMICONDUCTOR DEVICE PAD AREA PROTECTION STRUCTURE.

PREPARATION OF RADIOPHARMACEUTICALS BASED ON TECHNETIUM-99m/.

MINING DRILL BIT.

PITCH ADJUSTER.

SWEEPER/COLLECTOR DEVICE.

METHOD FOR THE NON-DESTRUCTIVE TEST OF SURFACE DEFECTS.

AIR TERMINAL GUIDANCE SYSTEM.

Process for the isolation and purification of alpha-interferons.

Method of hydrothermally preparing clear solutions of sodium silicates.

High-tension transformer winding with regulated voltage distribution.

Rotational drive coupling.

APPARAT, SOM KOMMUNIKERER MED DATAANLAEG, OG EN FREMGANGSMAADE TIL KOMMUNIKATION MED DATAANLAEG