| 摘要 |
<p>A thin film transistor having improved off-current characteristic and other electric characteristics, comprises an n- source region (112) and an n- drain region (113) which are made up of an n- type silicon film (low concentration region) having a thickness of approximately 400 Å. The silicon film is formed by crystallizing amorphous silicon by, for instance, an SPC technique. The crystallization is executed after the introduction of impurities, serving to activate the impurities. A gate electrode (116) is a metallic electrode and is formed after the formation of the n- source region (112) and n- drain region (113). The gate electrode (116), the n- source region (112), and the n- drain region (113) are not formed in a self-alignment manner.</p> |
