发明名称 SUBSTRAT BON MARCHE A STRUCTURE DOUBLE ET PROCEDE DE FABRICATION ASSOCIE
摘要 In preferred embodiments, the invention provides substrates that include a support, a first insulating layer arranged on the support, a non-mono-crystalline semi-conducting layer arranged on the first insulating layer, a second insulating layer arranged on the non-mono-crystalline semi-conducting layer; and top layer disposed on the second insulating layer. Additionally, a first gate electrode can be formed on the top layer and a second gate electrode can be formed in the non-mono-crystalline semi-conducting layer. The invention also provides methods for manufacture of such substrates.
申请公布号 FR2933234(B1) 申请公布日期 2016.09.23
申请号 FR20080003697 申请日期 2008.06.30
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 NGUYEN BICH YEN;MAZURE CARLOS
分类号 H01L21/02 主分类号 H01L21/02
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