发明名称 ウェーハの研磨方法およびウェーハの研磨装置
摘要 A practical method of polishing a wafer that can reduce wafer loss due to dummy polishing, and stabilize the LPD count in production wafers at a low level, is provided. in the method of polishing a wafer according to the present disclosure, a wafer 104 is brought into contact with a polishing cloth 112 provided on the surface of a polishing plate 110, and the wafer 104 and the polishing plate 110 are rotated, thereby performing several rounds of a polishing process on the surface of the wafer 104 using the same polishing cloth 112. At this time, the contact angle of the polishing cloth is measured, and based on the measured value thereof, the timing for a switchover from an initial polishing (or a dummy polishing) mode to a production polishing mode is determined.
申请公布号 JP6008053(B2) 申请公布日期 2016.10.19
申请号 JP20150533944 申请日期 2014.06.24
申请人 株式会社SUMCO 发明人 川崎 智憲
分类号 H01L21/304;B24B37/34 主分类号 H01L21/304
代理机构 代理人
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