PRODUCTION METHOD OF ALUMINUM OXIDE SINGLE CRYSTAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a production method of an aluminum oxide single crystal wafer capable of controlling a warp quantity of warp which is not concentric circular in the wafer.SOLUTION: A production method of an aluminum oxide single crystal wafer has a lapping process for lapping main surfaces on both sides of the aluminum oxide single crystal wafer, and a partial blast treatment process for applying a blast treatment to a partial region on the main surface on one side of the aluminum oxide single crystal wafer to which the lapping process is executed.SELECTED DRAWING: Figure 3