| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel element which can further improve photoelectric conversion efficiency.SOLUTION: An element 10 comprises: an n-type semiconductor layer 11 which contains at least one of zinc oxide and titanium oxide; a p-type semiconductor layer 12 which contacts the n-type semiconductor layer 11; and an M-doped vanadium oxide particles 13 doped with an element M (note that element M is one or more selected from a group consisting of W, Ti, Re, Ir, Os, Ru, Nb, Ta, Mo and Mg), which disperse between the n-type semiconductor layer 11 and the p-type semiconductor layer 12. The element 10 may comprise: a light permeable electrode 16 which is formed on a light permeable substrate 15 and contacts a surface of the n-type semiconductor layer 11 on the side opposite to a surface where the p-type semiconductor layer 12 contacts; and an ohmic electrode 17 which contacts a surface of the p-type semiconductor layer 12 on the side opposite to a surface where the n-type semiconductor layer 11 contacts.SELECTED DRAWING: Figure 1 |
