| 发明名称 |
SYSTEM AND METHOD FOR INCREASING III-NITRIDE SEMICONDUCTOR GROWTH RATE AND REDUCING DAMAGING ION FLUX |
| 摘要 |
Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 µm/hour can be achieved. |
| 申请公布号 |
WO2016205562(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
WO2016US37930 |
申请日期 |
2016.06.16 |
| 申请人 |
GEORGIA TECH RESEARCH CORPORATION |
发明人 |
DOOLITTLE, William Alan;CLINTON, Evan A.;FABIEN, Chole A.M.;GUNNING, Brendan Patrick;MEROLA, Joseph J. |
| 分类号 |
H01L21/205;C23C16/50;C30B29/38;H01L21/00;H01L21/20 |
主分类号 |
H01L21/205 |
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