摘要 |
The present disclosure is drawn to amorphous thin metal films and associated methods. Generally, an amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum; and 5 at % to 90 at % of a second metal selected from the group of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, and platinum, wherein the second metal is different than the first metal. Typically, the three elements account for at least 70 at % of the amorphous thin metal film. |
申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
ABBOTT, JR., James Elmer;AGARWAL, Arun K.;PUGLIESE, Roberto A.;LONG, Greg Scott;HORVATH, Stephen;KESZLER, Douglas A.;WAGER, John;OLSEN, Kristopher;MCGLONE, John |