发明名称 Active matrix substrate, display device, and short circuit defect correction method for active matrix substrate
摘要 A slit-shaped repair hole (27S) for repairing a short circuit defect of adjacent pixel electrodes (27) is provided straddling a storage capacitance wiring line (22CsL) at at least one intersection of the edges of the pixel electrode (27) and the storage capacitance wiring line (22CsL).
申请公布号 US9419017(B2) 申请公布日期 2016.08.16
申请号 US201214000804 申请日期 2012.02.16
申请人 SHARP KABUSHIKI KAISHA 发明人 Kanamori Teruki
分类号 G02F1/1362;G02F1/13;H01L27/12;H01L21/02;H01L21/268 主分类号 G02F1/1362
代理机构 Chen Yoshimura LLP 代理人 Chen Yoshimura LLP
主权项 1. An active matrix substrate having a non-display area arranged in a periphery thereof and a display area surrounded by the non-display area, the display area having a plurality of pixels arranged in a matrix therein, the active matrix substrate comprising: a substrate as a component of the active matrix substrate; a plurality of gate wiring lines disposed in parallel with each other on the substrate; a plurality of storage capacitance wiring lines that form storage capacitance elements for the respective pixels, the storage capacitance wiring lines being disposed on the substrate so as to extend in parallel with the plurality of gate wiring lines, and so as to go across each of the pixels; a gate insulating film disposed on the substrate so as to cover the plurality of gate wiring lines and the plurality of storage capacitance wiring lines; a plurality of source wiring lines disposed on the gate insulating film, the plurality of source wiring lines being in parallel with each other and intersecting the plurality of gate wiring lines and the plurality of storage capacitance wiring lines; a plurality of switching elements disposed at respective intersections of the plurality of gate wiring lines and the plurality of source wiring lines; an interlayer insulating film disposed on the gate insulating film so as to cover the plurality of source wiring lines, and a plurality of pixel electrodes disposed on the interlayer insulating film for the respective plurality of pixels, wherein a slit-shaped repair hole for repairing a short circuit defect between adjacent pixel electrodes is provided in each of the pixel electrodes so as to straddle the storage capacitance wiring line, the slit-shaped repair hole being provided adjacent to at least one intersection of the storage capacitance wiring line and two opposing boundary lines of the pixel electrode, wherein each of the pixel electrodes has a slit-shaped repair hole that straddles the source wiring line that is adjacent thereto, and wherein in each of the pixel electrodes, the repair hole provided so as to straddle the storage capacitance wiring line continues with the repair hole provided so as to straddle the source wiring line.
地址 Osaka JP