发明名称 研磨監視方法および研磨装置
摘要 PROBLEM TO BE SOLVED: To provide a polishing monitoring method with which an eddy current sensor can be calibrated without lowering an operation rate of a polishing device and which is capable of accurately monitoring a film thickness, and a polishing device thereof.SOLUTION: In the polishing monitoring method, a polishing object substrate W is pressed against a polishing plane 2a on a rotating polishing table 1 and a conductive film mf on the substrate W is polished, and the thickness of the conductive film mf is monitored during polishing with the eddy current sensor 50 arranged at the polishing table 1. The polishing monitoring method obtains an output signal of the eddy current sensor 50 during polishing, calculates an amount of adjustment for the output of the eddy current sensor 50 by using an output signal of the eddy current sensor 50 when there is no substrate W above the eddy current sensor 50, and monitors the thickness of the conductive film mf on the substrate W while correcting the output signal when there is the substrate W above the eddy current sensor 50 by using the amount of adjustment for the output.
申请公布号 JP6050571(B2) 申请公布日期 2016.12.21
申请号 JP20110173792 申请日期 2011.08.09
申请人 株式会社荏原製作所 发明人 高橋 太郎
分类号 G01B7/06;B24B49/04;B24B49/10;H01L21/304 主分类号 G01B7/06
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