发明名称 マグネトロンスパッタ装置
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus which can provide deposition with high in-plane uniformity to a substrate to be treated, and reduce deviation in erosion in a target.SOLUTION: A magnetron sputtering apparatus includes a target 31 which is arranged to face a substrate 10 to be treated in a vacuum chamber 2, and is applied with voltage from a power supply part 33. On a back side of the target 31, a base body 51 consisting of permeable magnetic material is provided. The base body 51 includes multiple first magnets 501 provided on a plane on the target 31 side and a second magnet 502 provided on a plane on an opposite side. The first magnet and the second magnet are arranged so as to form a ring-shaped horizontal magnetic field close to a plane on the substrate to be treated 10 side of the target 31.
申请公布号 JP6048319(B2) 申请公布日期 2016.12.21
申请号 JP20130119793 申请日期 2013.06.06
申请人 東京エレクトロン株式会社 发明人 水野 茂;戸島 宏至;沼田 実
分类号 C23C14/35;H01L21/285 主分类号 C23C14/35
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