| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate. |
| 申请公布号 |
US2016362292(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201514739419 |
申请日期 |
2015.06.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
CHANG YI-HSIEN;CHENG CHUN-WEN;CHENG CHUN-REN;LIN SHIH-WEI;SHEN WEI-CHENG |
| 分类号 |
B81B3/00;B81C1/00 |
主分类号 |
B81B3/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a first device comprising:
a plate including a plurality of apertures;a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, anda conductive plug extending from the plate through the membrane; and a second device comprising:
a substrate; anda bond pad disposed over the substrate,wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate. |
| 地址 |
HSINCHU TW |
