High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.
申请公布号
EP3103144(A1)
申请公布日期
2016.12.14
申请号
EP20150704450
申请日期
2015.02.05
申请人
Soraa, Inc.
发明人
ALDAZ, Rafael;ANKIREDDI, Sai;CICH, Michael J.;DAVID, Aurelien J.F.;DELILLE, Remi;HURNI, Christophe;KIM, Patrick;KRAMES, Michael Ragan;THOMSON, John