| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMR thin film having variable resistance characteristic suitable for CMOS applications. SOLUTION: The method for depositing CMR (colossal magnetoresistance) thin film suitable for the use in producing a CMOS device comprises a substrate preparing step including a forming step of an initial device structure, a step 12 of installing a substrate on a wafer chuck in an RF sputtering deposition chamber having a CMR target, a step 14 of heating a wafer at the temperature below 450°C in order to form CMR crystals of nano-size between the RF sputtering steps, a step 16 of introducing sputtering gas at the predetermined chamber pressure into the deposition chamber, a step 18 of applying the RF power to the CMR target in order to deposit a CMR material on the substrate, and a step of completing the production of the device. COPYRIGHT: (C)2006,JPO&NCIPI
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