| 主权项 |
1. A substrate processing apparatus, comprising:
a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field, wherein the source electrode includes a plurality of plasma source electrodes coupled to the chamber lid, and wherein the plurality of plasma source electrodes are connected in parallel to the RF power source, wherein the feeding line comprises:
a main feeding line connected to the RF power source;a plurality of auxiliary feeding lines connected to the main feeding line;a plurality of connecting lines connected to the plurality of auxiliary feeding lines; anda plurality of feeding rods connecting the plurality of connecting lines and the plurality of plasma source electrodes, wherein the shielding part comprises:
a first shielding cover shielding the plurality of auxiliary feeding lines; anda plurality of second shielding covers shielding the plurality of connecting lines and the plurality of feeding rod, wherein the first shielding cover includes lower and upper pieces combined to each other, and wherein the lower piece is disposed under the plurality of auxiliary feeding lines and the upper piece is disposed over the plurality of auxiliary feeding lines, wherein the lower piece is disposed under the plurality of auxiliary feeding lines and the upper piece is disposed over the plurality of auxiliary feeding lines, wherein the lower piece comprises:
a first accommodating portion which the plurality of auxiliary feeding lines are disposed over;a fence portion formed along a perimeter of the first accommodating portion;a first connecting portion coupled to the plurality of second shielding covers; anda through hole which a support supporting the plurality of auxiliary feeding lines penetrates through, wherein the upper piece comprises:
a plate portion which the plurality of auxiliary feeding lines are disposed under; anda circulation hole connected to an air circulating device means, wherein at least one of the plurality of second shielding covers comprises:
a pipe including a hollow hole accommodating the plurality of connecting lines;a passing portion formed by eliminating an upper portion of the pipe;a second connecting portion at both sides of the passing portion and coupled to the first shielding cover; and a communicating portion formed by eliminating a lower portion of the pipe, wherein the shielding part forms a common air circulation space for air to be circulated through and about the plurality of auxiliary feeding lines, the plurality of connecting lines and the plurality of feeding rods; and the shielding part is configured to prevent transmission of an electric field between the feeding line and an exterior to obtain a substantially uniform plasma density at a reaction space. |
