METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL, BASE CRYSTAL SUBSTRATE HAVING METAL NITRIDE LAYER AND MULTILAYERED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for easily manufacturing a group III nitride single crystal of high quality.

SOLUTION: A sapphire substrate with a main surface having an off angle of 0.15° in the direction of m axis toward (0001) plane is used as a base crystal substrate and a base Cr layer with a thickness of 20 nm is deposited on the base crystal substrate by sputtering. Then, the substrate is arranged in the reactor of an HVPE apparatus and a CrN film is obtained by nitriding for 30 minutes in supplying a carrier gas consisting only of N2 and an NH3 gas after the temperature is raised up to 1,080°C. After the nitriding process ends, the temperature is lowered to 900°C and a GaN buffer layer is grown for about 5 minutes in supplying a carrier gas substantially consisting only of H2, a GaCl gas which is a reaction product of Ga and HCl and an NH3 gas. Subsequently, the temperature of the reaction chamber is again raised up to 1,040°C and a GaN single crystal film with a thickness of about 20 μm is obtained on the base crystal substrate through the CrN film and the GaN buffer layer by growing the GaN single crystal film.

COPYRIGHT: (C)2009,JPO&INPIT