| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel fullerene Cderivative which has excellent solubility with a solvent used for a resist and has low electron accepting property, and when used as a base component of a resist composition for lithography using EUV light or EB, which gives the resist composition having high sensitivity without inhibiting generation of an acid by an acid generator.SOLUTION: The fullerene Cderivative is represented by formula (1) below. In the formula, the structure represented by FLN enclosed by a circle represents a Cfullerene skeleton; Rrepresents a hydrogen atom or a hydrocarbon group having 1 to 24 carbon atoms; Rrepresents an aromatic group having a phenolic hydroxyl group; Rrepresents a hydrogen atom, a hydroxyl group or an organic group having 1 to 24 carbon atoms; n is an even number of 2 to 12; and a plurality of Rmay be connected to each other to form a group coupling with two carbon atoms on the fullerene skeleton. |
