发明名称 SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD
摘要 The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt% or more and 95 wt% or less, the content of silver particles having an average particle diameter of 4 µm or greater and 8 µm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.
申请公布号 EP2058865(B1) 申请公布日期 2016.12.14
申请号 EP20070791807 申请日期 2007.08.02
申请人 Shin-Etsu Handotai Co., Ltd.;Shin-Etsu Chemical Co., Ltd. 发明人 ISHIKAWA, Naoki;OJIMA, Satoyuki;OHTSUKA, Hiroyuki;WATABE, Takenori;SAISU, Shigenori;UEGURI, Toyohiro
分类号 H01L31/04;H01L21/28;H01L21/288;H01L31/0224 主分类号 H01L31/04
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