发明名称 |
SEMICONDUCTOR SUBSTRATE, ELECTRODE FORMING METHOD, AND SOLAR CELL FABRICATING METHOD |
摘要 |
The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt% or more and 95 wt% or less, the content of silver particles having an average particle diameter of 4 µm or greater and 8 µm or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method. |
申请公布号 |
EP2058865(B1) |
申请公布日期 |
2016.12.14 |
申请号 |
EP20070791807 |
申请日期 |
2007.08.02 |
申请人 |
Shin-Etsu Handotai Co., Ltd.;Shin-Etsu Chemical Co., Ltd. |
发明人 |
ISHIKAWA, Naoki;OJIMA, Satoyuki;OHTSUKA, Hiroyuki;WATABE, Takenori;SAISU, Shigenori;UEGURI, Toyohiro |
分类号 |
H01L31/04;H01L21/28;H01L21/288;H01L31/0224 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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