发明名称 |
CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus capable of acquiring a highly precise number of shots even when a method which is different in division position from a conventional one is employed for division into shot figures.SOLUTION: A charged particle beam lithography apparatus comprises: a shot number computation part 52 which computes a first shot number of a figure pattern for division into a plurality of shot figures of size for shot with a charged particle beam from an end of a figure pattern; an increment shot number computation part 54 which computes an increment shot number of the figure pattern increasing as a division reference position as a reference position for division of the figure pattern is shifted to an inner side of the figure pattern; a shot number computation part 62 which computes a second shot number of a beam for a plurality of first small-region shots obtained by virtually dividing a drawing region of a sample; a drawing time prediction part 64 which predicts a drawing time using the second shot number; and a drawing part 150 which draws a figure pattern whose drawing time is predicted on the sample.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016207780(A) |
申请公布日期 |
2016.12.08 |
申请号 |
JP20150086014 |
申请日期 |
2015.04.20 |
申请人 |
NUFLARE TECHNOLOGY INC |
发明人 |
GOMI SAORI;HIGURE HITOSHI |
分类号 |
H01L21/027;G03F7/20;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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