| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of manufacturing an IC at low cost and with high reliability by using a plurality of chips using substrates made of different materials.SOLUTION: A semiconductor device manufacturing method comprises: a process of fixing by resin, a first semiconductor chip having an electrode formed on a surface side and a through electrode penetrating from the surface side to a rear face side, and a second semiconductor chip having an electrode formed on a surface side and a through electrode penetrating from the surface side to a rear face side on the rear face side of the first semiconductor chip and on the rear face side of the second semiconductor chip; a process of removing the resin by etching to expose the rear face side of the first semiconductor chip and the rear face side of the second semiconductor chip; and a process of forming a common electrode on the rear face side of the first semiconductor chip and on the rear face side of the second semiconductor chip.SELECTED DRAWING: Figure 14 |
