发明名称 |
Heterostructure with Stress Controlling Layer |
摘要 |
A solution for fabricating a device is described. The solution can include fabricating a heterostructure for the device, which includes at least one stress controlling layer. The stress controlling layer can include one or more attributes varies as a function of a lateral position based on a target variation of stresses in a semiconductor layer located directly under the stress controlling layer. Embodiments are further directed to a heterostructure including at least one stress controlling layer and a device including the heterostructure. |
申请公布号 |
US2016359081(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615173661 |
申请日期 |
2016.06.05 |
申请人 |
Sensor Electronic Technology, Inc. |
发明人 |
Shur Michael;Dobrinsky Alexander |
分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of fabricating a device, the method comprising:
fabricating a heterostructure for the device, wherein the fabricating the heterostructure includes fabricating a stress controlling layer directly on a surface of a semiconductor layer in a set of semiconductor layers, wherein the fabricating the stress controlling layer includes varying at least one attribute of the stress controlling layer as a function of a lateral position based on a target variation of stresses in the semiconductor layer. |
地址 |
Columbia SC US |