发明名称 Heterostructure with Stress Controlling Layer
摘要 A solution for fabricating a device is described. The solution can include fabricating a heterostructure for the device, which includes at least one stress controlling layer. The stress controlling layer can include one or more attributes varies as a function of a lateral position based on a target variation of stresses in a semiconductor layer located directly under the stress controlling layer. Embodiments are further directed to a heterostructure including at least one stress controlling layer and a device including the heterostructure.
申请公布号 US2016359081(A1) 申请公布日期 2016.12.08
申请号 US201615173661 申请日期 2016.06.05
申请人 Sensor Electronic Technology, Inc. 发明人 Shur Michael;Dobrinsky Alexander
分类号 H01L33/00;H01L33/32 主分类号 H01L33/00
代理机构 代理人
主权项 1. A method of fabricating a device, the method comprising: fabricating a heterostructure for the device, wherein the fabricating the heterostructure includes fabricating a stress controlling layer directly on a surface of a semiconductor layer in a set of semiconductor layers, wherein the fabricating the stress controlling layer includes varying at least one attribute of the stress controlling layer as a function of a lateral position based on a target variation of stresses in the semiconductor layer.
地址 Columbia SC US