| 摘要 |
PROBLEM TO BE SOLVED: To provide a supporter, a crystal production apparatus and a crystal production method capable of long-time growth.SOLUTION: A supporter 2 for supporting a seed crystal 3 comprising silicon carbide on the lower end surface is used for an apparatus for growing a crystal of silicon carbide on the under surface 3B of the seed crystal 3 by bringing the seed crystal 3 into contact with a solution 4 of silicon containing carbon, arranged in a crucible 5. The supporter 2 has inside an open hole 2a penetrating from the upper end 2A to the side surface 2C, and an opening 2C' on the side surface 2C of the open hole 2a is positioned in the crucible 5. |
