发明名称 |
DEVICE FOR FORMING MULTILAYER STRUCTURES |
摘要 |
technology of semiconductor materials and devices; for application of thin films of semiconductor joints and solid solutions on their base. SUBSTANCE: proposed device includes main quarts ampoules and two additional ampoules with whose help alloyed films are grown gaseous phases using two additional vapor sources: one with its own component and other with alloying admixture. Proposed device differs from prototype in availability of isolated chambers provided with holes where heaters may be located; main chamber has inner cavity with hole for placing the substrates. EFFECT: enhanced efficiency; increased productivity. 2 dwg
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申请公布号 |
RU2175692(C2) |
申请公布日期 |
2001.11.10 |
申请号 |
RU19970112020 |
申请日期 |
1997.07.09 |
申请人 |
SEVERO-OSETINSKIJ GOSUDARSTVENNYJ UNIVERSITET IM.;K L KHETAGUROVA |
发明人 |
BESTAEV M.V.;GATSOEV K.A.;GORELIK A.I.;DEGOEV M.A.;MOSHNIKOV V.A.;TOMAEV V.V. |
分类号 |
C30B23/02;C30B25/02;(IPC1-7):C30B23/02 |
主分类号 |
C30B23/02 |
代理机构 |
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