发明名称 |
LED fabrication via ion implant isolation |
摘要 |
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. |
申请公布号 |
EP1623467(B1) |
申请公布日期 |
2016.12.07 |
申请号 |
EP20040751419 |
申请日期 |
2004.05.06 |
申请人 |
Cree, Inc. |
发明人 |
WU, Yifeng;NEGLEY, Gerald, H.;SLATER, JR., David, B.;TSVETKOV, Valeri, F.;SUVOROV, Alexander |
分类号 |
H01L33/14;H01L21/00;H01L33/00;H01L33/02;H01L33/32 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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