Word line compensation for memory arrays

摘要

A method is provided for operating a non-volatile storage system that includes a plurality of bit lines, a word line comb including a plurality of word lines, and a plurality of memory elements, each memory element coupled between one of the bit lines and one of the word lines. The method includes receiving a current conducted by the word line comb, estimating a resistance of a conductive path between the word line comb and a selected word line voltage node, and generating a voltage at the selected word line voltage node based on the received current and the estimated resistance so that a voltage of the word line comb substantially equals a reference voltage.

主权项

1. A method for operating a non-volatile storage system comprising a plurality of bit lines, a word line comb comprising a plurality of word lines, and a plurality of memory elements, each memory element coupled between one of the bit lines and one of the word lines, the method comprising:
receiving a current conducted by the word line comb, the current comprising a sum of currents conducted by the word lines; estimating a resistance of a conductive path between the word line comb and a selected word line voltage node; and generating a voltage at the selected word line voltage node based on the received current and the estimated resistance so that a voltage of the word line comb substantially equals a reference voltage.