| 发明名称 | Device manufacture and packaging method thereof | ||
| 摘要 | Some embodiments of the present disclosure provide a semiconductive device. The semiconductive device includes a first conductive layer and a second conductive layer above the first conductive layer. The second conductive layer includes a first portion and a second portion protruding from the first portion. A via structure is under the second conductive layer and on top of the first conductive layer. The via structure is substantially aligned vertically with the second portion. | ||
| 申请公布号 | US9595492(B2) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201514658540 | 申请日期 | 2015.03.16 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. | 发明人 | Liu Chien-Hsuan |
| 分类号 | H01L21/027;H01L21/768;H01L23/522;H01L23/528 | 主分类号 | H01L21/027 |
| 代理机构 | WPAT, P.C., Intellectual Property Attorneys | 代理人 | WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A method of manufacturing a semiconductive device, comprising: forming a top dielectric layer over a bottom dielectric layer having a recess; forming a photosensitive layer over the top dielectric layer; and exposing a first portion and a second portion of the photosensitive layer, wherein the second portion protruding from the first portion in a lateral direction, and the second portion substantially overlaps with the recess, wherein the method of exposing the first portion of the photosensitive layer is simultaneously performed with the method of exposing the second portion of the photosensitive layer. | ||
| 地址 | Hsinchu TW | ||