Semiconductor devices with heterojunction barrier regions and methods of fabricating same

摘要

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact. Related methods are also disclosed.

主权项

1. A Schottky diode comprising:
a drift layer having a first surface associated with an active region and an edge termination region substantially laterally adjacent the active region, wherein the drift layer comprises silicon carbide and is doped with a doping material of a first conductivity type and the edge termination region has an edge termination recess extending into the drift layer from the first surface; a Schottky layer over the active region of the first surface to form a Schottky junction; an edge termination structure formed in a bottom surface of the edge termination recess, wherein the edge termination structure comprises:
a first guard ring; anda second guard ring; an array of junction barrier elements formed below the Schottky junction and in the drift layer; and an implanted region, wherein one of the first and second guard rings is only partially disposed within the implanted region and the other of the first and second guard rings is completely disposed within the implanted region.