发明名称 Thin film deposition apparatus including deposition blade
摘要 A thin film deposition apparatus includes a deposition source that is disposed opposite to a substrate and holds a deposition material that is vaporized; a first nozzle unit disposed between the substrate and the deposition source and having first slit units arranged in a first direction of the substrate; a second nozzle unit disposed between the first nozzle unit and the substrate and having second slit units arranged in the first direction of the substrate; and at least one barrier member assembly disposed between the first nozzle unit and the second nozzle unit and partitioning the space between the first nozzle unit and the second nozzle unit. A deposition blade is optionally disposed in any space formed between the first nozzle unit and the second nozzle unit during a stand-by mode to prevent the deposition of the deposition material from being deposited onto undesirable regions of the chamber.
申请公布号 US9593408(B2) 申请公布日期 2017.03.14
申请号 US201012815673 申请日期 2010.06.15
申请人 Samsung Display Co., Ltd. 发明人 Lee Jung-Min;Lee Choong-Ho
分类号 C23C14/00;C23C14/24;C23C14/04;C23C14/12 主分类号 C23C14/00
代理机构 Lewis Roca Rothgerber Christie LLP 代理人 Lewis Roca Rothgerber Christie LLP
主权项 1. A method of performing deposition on a substrate, the method comprising: completing a deposition process on the substrate by depositing a deposition material from a deposition source which holds the deposition material, after passing the deposition material through a first nozzle unit comprising a plurality of first slit units arranged in a first axis direction of the substrate, and a second nozzle unit comprising a plurality of second slit units arranged in the first axis direction, wherein the deposition source and the first and second nozzle units are configured to move relative to the substrate in a second axis direction perpendicular to the first axis direction during the deposition process, and wherein the second nozzle unit defines a pattern of the deposition material on the substrate; entering a stand-by mode between the deposition process and another deposition process; inserting a deposition blade into a space between the first and second nozzle units by moving the deposition source and the first and second nozzle units along the second axis direction, to block the deposition material passing through the first nozzle from passing through the second nozzle unit during the stand-by mode; and removing the deposition blade from the space by moving the first and second nozzle units along the second axis direction, to allow the deposition material to pass through the second nozzle unit during the another deposition process.
地址 Yongin-si KR