发明名称 |
Semiconductor devices having through electrodes, methods of manufacturing the same, and semiconductor packages including the same |
摘要 |
A semiconductor device includes a semiconductor layer having a first surface and a second surface, a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed on the first surface of the semiconductor layer and electrically coupled to the through electrode, a passivation pattern including a first insulation pattern that surrounds a sidewall of the protruding portion of the through electrode and extends onto the second surface of the semiconductor layer and a second insulation pattern that covers the first insulation pattern and has an etch selectivity with respect to the first insulation pattern, and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern. |
申请公布号 |
US9595499(B2) |
申请公布日期 |
2017.03.14 |
申请号 |
US201514850875 |
申请日期 |
2015.09.10 |
申请人 |
SK HYNIX INC. |
发明人 |
Park Wan Choon |
分类号 |
H01L23/00;H01L25/065;H01L27/118;H01L23/29;H01L23/31;H01L23/48;H01L21/768;H01L21/683 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor layer having a first surface and a second surface; a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer by a predetermined height; a front-side bump disposed over the first surface of the semiconductor layer and electrically connected to the through electrode; a passivation pattern surrounding a sidewall of the protruding portion of the through electrode and extending onto the second surface of the semiconductor layer; and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern, wherein a first portion of the passivation pattern under the back-side bump has a first thickness and a second portion of the passivation pattern at a position on the second surface of the semiconductor layer that does not overlap with the back-side bump has a second thickness, wherein the second thickness of the passivation pattern is less than the first thickness of the passivation pattern. |
地址 |
Icheon KR |