| 摘要 |
PURPOSE:To build an element capable of withstanding changes due to passage of time by a method wherein a gate insulating film is formed by sputtering in a 0.8-2.0Pa atmosphere for reduction in charged traps and leak currents in the gate insulating film. CONSTITUTION:On an insulating substrate 1 made for example of glass, an approximately 100nm-thick Al gate electrode 2 is built and, covering them, an approximately 300nm-thick Al2O3 gate insulating film 3 is formed by high-frequency magnetron sputtering. Further, on the gate insulating film 3, an approximately 50nm-thick CdSe film 4 is formed by resistance heating, and an approximately 100nm-thick Al-made source electrode 5 and drain electrode 6 are built with a prescribed gap of several to several tens of mums between them. The gate insulating film 3, being formed by spattering in a 0.8-2.0Pa atmosphere, suffers less from changes due to passage of time or is reduced in gate leak currents. |
