| 摘要 |
<p>PROBLEM TO BE SOLVED: To find a buffer layer structure, wherein the propagation and growth of the crystal defect due to the energization can be suppressed by reducing the lamination defect density to 10<4> cm<-2> or less. SOLUTION: A II-VI compd. semiconductor light emitting element has a first GaAs buffer layer 2 on a GaAs substrate 1, a second GaInPAs buffer layer 3 thereon, third ZnSe buffer layer 4 thereon, fourth buffer layer thereon which has a II-VI compd. semiconductor superlattice structure, and fifth Ge buffer layer between the second and third buffer layers 3 and 4.</p> |
