Semiconductor device and method of fabricating the same

摘要

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate: a semiconductor active region on a surface of the semiconductor substrate, wherein the semiconductor active region protrudes away from the surface of the semiconductor substrate; and an isolation layer on the surface of the semiconductor substrate to define the semiconductor active region, wherein a top surface level of the isolation layer is lower than a top surface level of the semiconductor active region; wherein a first portion of a sidewall of the semiconductor active region below the surface of the isolation layer has a first slope, wherein a second portion of the sidewall of the semiconductor active region beyond the surface of the isolation layer has a second slope different than the first slope, and wherein a third portion of the sidewall of the semiconductor active region beyond the surface of the isolation layer has a third slope different than the first and second slopes.