| 发明名称 | Nonvolatile memory refresh | ||
| 摘要 | A system and method of refreshing a nonvolatile memory having memory cells. The method includes identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; and refreshing the identified memory cells. | ||
| 申请公布号 | US9595354(B2) | 申请公布日期 | 2017.03.14 |
| 申请号 | US201414570219 | 申请日期 | 2014.12.15 |
| 申请人 | Infineon Technologies AG | 发明人 | Kern Thomas;Hofmann Karl;Goessel Michael |
| 分类号 | G11C29/00;G11C29/02;G06F11/10;H03M13/37;G11C13/00;G11C11/16;G11C29/52;G11C7/04;G11C29/42;G11C29/50 | 主分类号 | G11C29/00 |
| 代理机构 | Schiff Hardin LLP | 代理人 | Schiff Hardin LLP |
| 主权项 | 1. A method of refreshing a nonvolatile memory having memory cells, the method comprising: identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; refreshing the one or more identified memory cells; and remapping the one or more identified memory cells from the spare addresses back to the original addresses after the nonvolatile memory ceases to be at a temperature that is greater than a predetermined temperature. | ||
| 地址 | Neubiberg DE | ||