发明名称 LINE EDGE ROUGHNESS REDUCTION VIA STEP SIZE ALTERATION
摘要 An image correction application relating to the ability to apply maskless lithography patterns to a substrate in a manufacturing process is disclosed. The embodiments described herein relate to a software application platform, which corrects non-uniform image patterns on a substrate. The application platform method includes in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns, exposing a first portion of the substrate to a first shot of electromagnetic radiation, exposing a second portion of the substrate to a second shot of electromagnetic radiation, and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.
申请公布号 US2017068163(A1) 申请公布日期 2017.03.09
申请号 US201615253379 申请日期 2016.08.31
申请人 Applied Materials, Inc. 发明人 LAIDIG Thomas L.;JOHNSON Joseph R.;BENCHER Christopher Dennis
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项 1. A method for correcting non-uniform image patterns on a substrate, comprising: in a digital micromirror device (DMD) installed in an image projection system, the DMD having a plurality of columns, each column having a plurality of mirrors, disabling at least one entire column of the plurality of columns; exposing a first portion of the substrate to a first shot of electromagnetic radiation; translating the substrate a step size and exposing a second portion of the substrate to a second shot of electromagnetic radiation; and iteratively translating the substrate a step size and exposing another portion of the substrate to another shot of electromagnetic radiation until the substrate has been completely exposed to shots of electromagnetic radiation.
地址 Santa Clara CA US