| 摘要 |
Provided is a structure configured such that even when resin, such as methacryl resin, exhibiting a low adhesion to a metal thin film is used, the resin and the metal thin film are firmly stacked in close contact with each other, and a film formation method capable of manufacturing a structure in which a metal thin film is, with a high adhesion, formed on a resin work exhibiting a low adhesion to the metal thin film, wherein the structure is configured such that an Al thin film 102 is, by sputtering, formed on a work W made of methacryl resin to form a stack of the work W and the Al thin film 102, and has a mixed region 101 of Al, Si, O, and C between the work W and the Al thin film 102. In the mixed region 101, Al is covalently bound to any one of Si, O, and C, or Al, Si, O, and C form a diffusion mixed layer. |
