ADAPTIVE MULTI-PHASE ERASE

摘要

The various implementations described herein include systems, methods and/or devices used to enable multi-phase erasure in a storage device. The method includes performing an erase operation on a portion of one or more non-volatile memory devices, by performing a sequence of erase phase operations until an erase operation stop condition is satisfied. Each erase phase operation includes: performing an erase phase on the portion of the non-volatile memory devices using an erase voltage, and determining an erase phase statistic for the erase phase. For each erase phase operation in the sequence of erase phase operations, other than a first erase phase operation, the erase voltage used when performing the erase phase operation is equal to the erase voltage used when performing a prior erase phase operation in the sequence of erase phase operations plus an erase voltage increment based on the erase phase statistic for the prior erase phase operation.