PARASITIC CHANNEL MITIGATION USING ELEMENTAL DIBORIDE DIFFUSION BARRIER REGIONS

摘要

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.

主权项

1. A semiconductor structure, comprising:
a substrate comprising silicon and comprising at least a layer having a resistivity of greater than 102 Ohms-cm; a diffusion barrier region comprising an elemental diboride located over a surface of the substrate; and a III-nitride material region located over the diffusion barrier region.