| 摘要 |
The invention relates to the technical field of semiconductors, and specifically, to a tunnel field-effect transistor (TFET) and a manufacturing method thereof. A channel area (202) is connected to a source area (201) and a drain area (203) of the TFET. A pocket layer (204) and a gate oxide layer (205) are fabricated between the source area and a gate area (206). A metal layer (208) is fabricated at a first area of the source area. The first area is located at a side where the source area is in contact with the pocket layer. At least a part of the pocket layer is configured to cover the metal layer. The pocket layer and a second area of the source area form a first tunneling junction of the TFET. The pocket layer and the metal layer form a second tunneling junction of the TFET. By fabricating the metal layer at the first area of the source area, the pocket layer and the second area where a non-metal layer of the source area is located form the first tunneling junction of the TFET, and the pocket layer and the metal layer form the second tunneling junction of the TFET. In comparison to a TFET comprising a tunneling junction formed of only a pocket layer and a source area, the embodiment can increase, via the tunneling junction formed of the pocket layer and the metal layer, a tunneling current, thereby increasing the tunneling current of the TFET without increasing an area of the TFET. |
