发明名称 |
PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION |
摘要 |
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates. |
申请公布号 |
US2017069743(A1) |
申请公布日期 |
2017.03.09 |
申请号 |
US201514847240 |
申请日期 |
2015.09.08 |
申请人 |
M/A-COM Technology Solutions Holdings, Inc. |
发明人 |
Roberts John Claassen |
分类号 |
H01L29/778;H01L29/66;H01L29/06;H01L21/265;H01L29/20;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of forming a semiconductor structure, comprising:
implanting a species having a relative atomic mass of less than 5 into a structure comprising a III-nitride material region and a substrate comprising silicon, wherein at least a portion of the species is implanted through the substrate without being implanted through the III-nitride material region, and implanting the species produces a surface region comprising no parasitic channel or a low-conductivity parasitic channel. |
地址 |
Lowell MA US |