SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

In a semiconductor device and a method of manufacturing the same a fuse structure may be formed during formation of first to third contact plugs connected to a transistor. The fuse structure may include first and second fuse contact plugs having the same height as the first and second contact plugs, and a connection pattern having the same height as the third contact plug. The connection pattern may be connected between the first and second fuse contact plugs.

主权项

1. A semiconductor device comprising:
a substrate including a first region and a second region; a transistor comprising a gate electrode and first and second dopant regions that are disposed on the first region of the substrate; first, second, and third contact plugs electrically connected to the first dopant region, the second dopant region, and the gate electrode, respectively; and a fuse structure disposed on the second region of the substrate, the fuse structure comprising: first and second fuse contact plugs having the same height as the first and second contact plugs; and a connection pattern having the same height as the third contact plug, wherein the connection pattern is connected between the first and second fuse contact plugs.