MANUFACTURING METHOD OF WIREBONDING PAD

摘要

The wire bonding pad formation method includes the steps of depositing a protective layer on the overall surface of a integrated circuit, in which a metal line is formed on a silicon substrate, etching a predetermined portion of the protective layer to expose the metal line, coating photo-sensitive polyimide on the overall structure including the protective layer, exposing a portion of the polyimide at which wire bonding pad will be formed, developing the exposed polyimide to form wire bonding pad, hardening the polyimide at the high temperature, etching the polyimide for 10 to 60 seconds using oxygen plasma, thereby removing the polyimide remnant remaining on the wire bonding pad.