NON-VOLATILE RESISTANCE MEMORY DEVICES INCLUDING A VOLATILE SELECTOR WITH AN ALLOY ELECTRODE AND SILICON DIOXIDE MATRIX

摘要

A nonvolatile memory cell includes a volatile selector electrically coupled in series with a nonvolatile resistance memory device. The nonvolatile resistance memory device may be a switching material sandwiched between a first bottom electrode and a first top electrode. The volatile selector may be a selector oxide matrix sandwiched between a second bottom electrode and a second top electrode. The selector oxide matrix includes silicon dioxide, while one or both of the second bottom electrode and the second top electrode includes an alloy containing a fast diffusing cation metal and a metal that promotes adhesion to the selector oxide matrix. A memory array utilizing the memory cell and a method for manufacturing the memory array are also provided.