SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a semiconductor device having a highly reliable through via hole. This semiconductor device has: a semiconductor substrate; first wiring formed in a first wiring layer on the semiconductor substrate; a through via hole, which is penetrating the semiconductor substrate, and is connected to the first wiring; and a first insulating film positioned at an area corresponding to an inter-wiring space of the first wiring, said area being at the interface between the through via hole and the first wiring layer.