| 摘要 |
Two p/n-joined semiconductor layers 7A, 7B are provided as part of a photoelectric conversion layer 1, at least one semiconductor layer 7A, 7B among the two semiconductor layers 7A, 7B being a quantum dot integrated film 11. The quantum dot integrated film 11 is provided with two or more quantum dot layers 7A, 7B having different energy levels. When the quantum dot integrated film 11 is a p-type film, the quantum dot layer 7A having a large difference between the energy level BV and the Fermi level Ef of a valence band is disposed close to a p/n junction surface 8. |
