| 发明名称 |
Stress Assisted Wet and Dry Epitaxial Lift Off |
| 摘要 |
A method comprises providing a sacrificial release layer on a base substrate; forming a device layer on the sacrificial release layer; depositing a metal stressor layer on the device layer; etching the sacrificial release layer; and using epitaxial lift off to release the device layer and the metal stressor layer from the base substrate. |
| 申请公布号 |
US2017069491(A1) |
申请公布日期 |
2017.03.09 |
| 申请号 |
US201514845346 |
申请日期 |
2015.09.04 |
| 申请人 |
international Business Machines Corporation |
发明人 |
Cheng Cheng-Wei;Li Ning;Sadana Devendra K.;Shiu Kuen-Ting |
| 分类号 |
H01L21/02;H01L21/3065;H01L21/285;H01L21/306;H01L21/308;H01L21/3205 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
providing a sacrificial release layer on a base substrate; forming a device layer on the sacrificial release layer; depositing a metal stressor layer on the device layer; etching the sacrificial release layer; and using epitaxial lift off to release the device layer and the metal stressor layer from the base substrate. |
| 地址 |
Armonk NY US |
