| 摘要 |
The invention relates to an apparatus for processing a surface of the substrate (1, 101) by atomic layer deposition and to a method for operating the apparatus. The apparatus comprising a deposition chamber (4) and one or more lead-through connections (13, 15, 16) provided between one or more side chambers (12, 42, 52, 112) and the deposition chamber (4). The one or more lead through connections (13, 15, 16) comprises one or more lead- through chambers (18) and a secondary pressure device (20) operatively connected to the one or more lead-through chambers (18). |
