NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride semiconductor device including a substrate, a channel layer, a carbon-poor barrier layer having a recess, a carbon-rich barrier layer disposed over the recess and the carbon-poor barrier layer, and a gate electrode above the recess, wherein the carbon-poor and carbon-rich barrier layers have bandgaps larger than that of the channel layer, the upper surface of the carbon-rich barrier layer includes a first main surface including a source electrode and a drain electrode, and a bottom surface of a depression disposed along the recess, and side surfaces of the depression connecting the first main surface to the bottom surface of the depression, and among edges of the depression of the carbon-rich barrier layer which are boundaries between the first main surface and the side surfaces of the depression, the edge of the depression of the carbon-rich barrier layer closest to the drain electrode is covered with the gate electrode.

主权项

1. A nitride semiconductor device, comprising:
a substrate; a channel layer disposed on the substrate; a carbon-poor barrier layer disposed on the channel layer and having a recess; a carbon-rich barrier layer disposed over the recess and the carbon-poor barrier layer, and having a carbon content higher than a carbon content of the carbon-poor barrier layer; a gate electrode disposed on the recess; and a source electrode and a drain electrode disposed on opposing sides of the gate electrode and spaced from the gate electrode, wherein the carbon-poor barrier layer and the carbon-rich barrier layer contain carbon, the carbon-rich barrier layer has a carbon content higher than a carbon content of the carbon-poor barrier layer, the carbon-poor barrier layer and the carbon-rich barrier layer have bandgaps larger than a bandgap of the channel layer, an upper surface of the carbon-rich barrier layer includes a first main surface on which the source electrode and the drain electrode are disposed, a bottom surface of a depression disposed along the recess, and side surfaces of the depression connecting the first main surface to the bottom surface of depression, and among edges of the depression of the carbon-rich barrier layer which are boundaries between the first main surface and the side surfaces of the depression, an edge of the depression of the carbon-rich barrier layer closest to the drain electrode is covered with the gate electrode.