LIGHT EMITTING DEVICE AND LIGHTING APPARATUS HAVING SAME

摘要

A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.

主权项

1. A light emitting device comprising:
a light emitting structure layer including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a contact layer disposed under the second conductivity type semiconductor layer and formed of a conductive material; a reflective layer disposed under the contact layer; a capping layer disposed under the reflective layer; and a conductive support member disposed under the capping layer, wherein a thickness of the reflective layer is greater than that of the second conductivity type semiconductor layer and is 90 or more times that of the contact layer, wherein a lower surface of the reflective layer includes a plurality of protrusion portions and a plurality of recesses disposed between the plurality of protrusion portions, and wherein a lower surface of the reflective layer includes an uneven structure with respect to a horizontal top surface of the conductive support member.