发明名称 SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS
摘要 The present technology relates to a solid state imaging device capable of providing a solid state imaging device that does not cause deterioration of image quality due to an increase in reading speed of a pixel signal, and an imaging apparatus. In a pixel array block in which a plurality of pixels are two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, a plurality of pixel output lines are provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels are arranged separately in a plurality of wiring layers. The present technology can be applied to, for example, a CMOS image sensor.
申请公布号 US2017125464(A1) 申请公布日期 2017.05.04
申请号 US201515124860 申请日期 2015.03.13
申请人 SONY CORPORATION 发明人 ABE Takashi;SHIMAMURA Nobutaka
分类号 H01L27/146;H04N5/374 主分类号 H01L27/146
代理机构 代理人
主权项 1. A solid state imaging device comprising a pixel array block in which a plurality of pixels is two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, wherein, in the pixel array block, a plurality of pixel output lines is provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels is arranged separately in a plurality of wiring layers.
地址 Tokyo JP