发明名称 |
SOLID STATE IMAGING DEVICE AND IMAGING APPARATUS |
摘要 |
The present technology relates to a solid state imaging device capable of providing a solid state imaging device that does not cause deterioration of image quality due to an increase in reading speed of a pixel signal, and an imaging apparatus. In a pixel array block in which a plurality of pixels are two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, a plurality of pixel output lines are provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels are arranged separately in a plurality of wiring layers. The present technology can be applied to, for example, a CMOS image sensor. |
申请公布号 |
US2017125464(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201515124860 |
申请日期 |
2015.03.13 |
申请人 |
SONY CORPORATION |
发明人 |
ABE Takashi;SHIMAMURA Nobutaka |
分类号 |
H01L27/146;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A solid state imaging device comprising
a pixel array block in which a plurality of pixels is two-dimensionally arrayed, each of the pixels including: a photoelectric conversion device; a plurality of transistors to be used for reading a signal from the photoelectric conversion device; and wiring for driving the transistors, wherein, in the pixel array block, a plurality of pixel output lines is provided for each one column of the plurality of pixels two-dimensionally arrayed, and the plurality of pixel output lines from the pixels is arranged separately in a plurality of wiring layers. |
地址 |
Tokyo JP |