发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried. |
申请公布号 |
US2017125267(A1) |
申请公布日期 |
2017.05.04 |
申请号 |
US201715408554 |
申请日期 |
2017.01.18 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KIMURA Shinsuke;OGAWA Yoshihiro |
分类号 |
H01L21/67;B08B7/00;B08B3/08 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor manufacturing apparatus comprising:
a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate, wherein the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid. |
地址 |
Minato-ku JP |