发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.
申请公布号 US2017125267(A1) 申请公布日期 2017.05.04
申请号 US201715408554 申请日期 2017.01.18
申请人 Kabushiki Kaisha Toshiba 发明人 KIMURA Shinsuke;OGAWA Yoshihiro
分类号 H01L21/67;B08B7/00;B08B3/08 主分类号 H01L21/67
代理机构 代理人
主权项 1. A semiconductor manufacturing apparatus comprising: a cleaning-liquid supply part supplying a cleaning liquid cleaning a semiconductor substrate to a surface of the semiconductor substrate; and a chemical-liquid supply part supplying a first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid on the surface of the semiconductor substrate, wherein the chemical-liquid supply part has a double piping structure comprising a first pipe supplying the first chemical liquid and a second pipe supplying the second chemical liquid.
地址 Minato-ku JP